Changes in efficiency of a solar cell according to various surface-etching shapes of silicon substrateMIN GU KANG; TARK, S; JEONG CHUL LEE et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 14-18, issn 0022-0248, 5 p.Conference Paper

Characteristics of CuInS_2/ZnS quantum dots and its application on LEDKIM, Hyunki; JI YEON HAN; DONG SEOK KANG et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 90-93, issn 0022-0248, 4 p.Conference Paper

Comparison of metal-organic decomposed (MOD) cerium oxide (CeO₂) gate deposited on GaN and SiC substratesQUAH, H. J; LIM, W. F; CHEONG, K. Y et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 2-8, issn 0022-0248, 7 p.Conference Paper

Diffusion of chromium in sapphire: The effects of electron beam irradiationAHN, Yong-Kil; SEO, Jin-Gyo; PARK, Jong-Wan et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 45-49, issn 0022-0248, 5 p.Conference Paper

Effect of nitrogen flow ratio on the structural and optical properties of aluminum nitride thin filmsCHO, Shinho.Journal of crystal growth. 2011, Vol 326, Num 1, pp 179-182, issn 0022-0248, 4 p.Conference Paper

Electrical properties of top-gate oxide thin-film transistors with double-channel layersCHEONG, Woo-Seok; SUNG MOOK CHUNG; SHIN, Jae-Hun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 186-190, issn 0022-0248, 5 p.Conference Paper

Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist maskKIM, Sang-Il; KIM, Bumjoon; JANG, Samseok et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 200-204, issn 0022-0248, 5 p.Conference Paper

Low-temperature soluble InZnO thin film transistors by microwave annealingSONG, Keunkyu; CHANG YOUNG KOO; JUN, Taehwan et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 23-27, issn 0022-0248, 5 p.Conference Paper

Spray pyrolysis synthesis of MAl₂O₄:Eu²⁺ (M = Ba, Sr) phosphor for UV LED excitationCHUNG, Wonkeun; HONG JEONG YU; SUN HEE PARK et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 73-76, issn 0022-0248, 4 p.Conference Paper

Strongly-enhanced near-band-edge photoluminescence of Nb-implanted ZnO filmsCHANG OH KIM; DONG HEE SHIN; CHOI, Suk-Ho et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 42-44, issn 0022-0248, 3 p.Conference Paper

The crossover of preferred orientation in heteroepitaxial ZnO/MgO(0 0 1) filmsSEO, S. H; KANG, H. C.Journal of crystal growth. 2011, Vol 326, Num 1, pp 166-170, issn 0022-0248, 5 p.Conference Paper

The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering methodJAE KEUN SEO; KO, Ki-Han; WON SEOK CHOI et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 183-185, issn 0022-0248, 3 p.Conference Paper

Effect of substitution of nitrogen ions to red-emitting Sr₃B₂O_6-3/2xN_x:Eu²⁺ oxy-nitride phosphor for the application to white LEDSANG HOON JUNG; DONG SEOK KANG; DUK YOUNG JEON et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 116-119, issn 0022-0248, 4 p.Conference Paper

Improved sorption characteristics of NH₃ molecules on the solution-processed graphene sheetsKO, Geunwoo; JUNG, Younghun; LEE, Kwan-Young et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 208-211, issn 0022-0248, 4 p.Conference Paper

Improvement on the synthesis technique of ultrananocrystalline diamond films by using microwave plasma jet chemical vapor depositionLIN, Chii-Ruey; LIAO, Wen-Hsiang; WEI, Da-Hua et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 212-217, issn 0022-0248, 6 p.Conference Paper

Influence of Al₂O₃ additions on the crystallization mechanism and properties of diopside/anorthite hybrid glass-ceramics for LED packaging materialsMINA KANG; KANG, Seunggu.Journal of crystal growth. 2011, Vol 326, Num 1, pp 124-127, issn 0022-0248, 4 p.Conference Paper

Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVDSON, Ji-Su; KWANG HYEON BAIK; YONG GON SEO et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 98-102, issn 0022-0248, 5 p.Conference Paper

Study on photoluminescence of GaN-based UV-LEDs with refractive index gradient polymeric nanopatternsPARK, Manshik; YU, Guiduk; SHIN, Kyusoon et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 28-32, issn 0022-0248, 5 p.Conference Paper

The effects of zinc on the characteristics of (Zn,Ca)TiO₃:Pr³⁺ phosphorsSUNG MOOK CHUNG; KANG, Seung-Youl; SHIN, Jae-Heon et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 94-97, issn 0022-0248, 4 p.Conference Paper

Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extractionKIM, Hong-Yeol; JUNG, Younghun; SUNG HYUN KIM et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 65-68, issn 0022-0248, 4 p.Conference Paper

Annealing effect on conductivity behavior of Li-doped ZnO thin film and its application as ZnO-based homojunction deviceTSAI, Shu-Yi; HON, Min-Hsiung; LU, Yang-Ming et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 85-89, issn 0022-0248, 5 p.Conference Paper

Growth behavior and growth rate dependency in LEDs performance for Mg-doped a-plane GaNSONG, Keun-Man; KIM, Jong-Min; LEE, Dong-Hun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 135-139, issn 0022-0248, 5 p.Conference Paper

Luminous properties of Sr_1-xZn_xSe:Eu²⁺ phosphors for LEDs applicationHONG JEONG YU; CHUNG, Wonkeun; SUN HEE PARK et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 77-80, issn 0022-0248, 4 p.Conference Paper

Photoluminescence and structural properties of Ca₃Y(VO₄)₃: RE³⁺ (=Sm³⁺, Ho³⁺ and Tm³⁺) powder phosphors for tri-colorsVENGALA RAO BANDI; BHASKAR KUMAR GRANDHE; JAYASIMHADRI, M et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 120-123, issn 0022-0248, 4 p.Conference Paper

Spontaneous formation of GaN nanostructures by molecular beam epitaxyKESARIA, Manoj; SHETTY, Satish; SHIVAPRASAD, S. M et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 191-194, issn 0022-0248, 4 p.Conference Paper